Depth profiling of strain using micro-Raman measurements

被引:9
作者
Atkinson, A [1 ]
Jain, SC
Maes, HE
Pinardi, K
Willander, M
机构
[1] Univ London Imperial Coll Sci Technol & Med, London SW7 2BP, England
[2] IMEC, B-3001 Louvain, Belgium
[3] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden
关键词
D O I
10.1088/0268-1242/16/7/310
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe a method to determine the variation of strain with depth in a sample using Raman measurements. The method involves recording Raman spectra using incident light having different absorption coefficients. These can be obtained using a single incident light frequency by adjustment of the point of focus. The Raman spectra are then processed using a Laplace transform to obtain the characteristic elastic strain as a function of depth. The method is illustrated using several model strain distributions. It is applicable to practical. cases such as graded interfaces and strained/relaxed epitaxial layers.
引用
收藏
页码:584 / 588
页数:5
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