Magnetic-field-induced multiple electronic states in La0.5Ca0.5MnO3+delta

被引：59

作者：

Xiao, G

McNiff, EJ

Gong, GQ

Gupta, A

Canedy, CL

Sun, JZ

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

[2] MIT, FRANCIS BITTER NATL MAGNET LAB, CAMBRIDGE, MA 02139 USA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.54.6073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed multiple electronic states in the presence of a magnetic field in the half-doped La0.5Ca0.5MnO3+delta system. The resistivity of each state differs from one another by at least one order of magnitude. Application of a magnetic field induces first-order phase transitions among these states. A maximum 10(9)-fold magnetoresistance ratio has been observed at 4.2 K between the least and the most conductive phases. Our results differ from early observations that there is only one metal-to-insulator (two states) transition in other related half-doped systems.

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收藏

页码：6073 / 6076

页数：4

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