Investigation of n-doping in CVD diamond using gap states spectroscopy

被引：18

作者：

Nesladek, M ^{[1
]}

Meykens, K ^{[1
]}

Stals, LM ^{[1
]}

Quaeyhaegens, C ^{[1
]}

DOlieslaeger, M ^{[1
]}

Wu, TD ^{[1
]}

Vanecek, M ^{[1
]}

Rosa, J ^{[1
]}

机构：

[1] ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE,CZECH REPUBLIC

来源：

关键词：

CVD diamond; n-doping; defects; optical absorption; impurity incorporation;

D O I：

10.1016/0925-9635(95)00486-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-situ doping of CVD diamond with N and Li using N-2 and a Li-containing organometaliic precursor was investigated. Photothermal deflection spectroscopy (PDS) was used to study optical transitions from localized electronic states in the bandgap of CVD diamond resulting from the presence of extrinsic and intrinsic impurities. The advantage of PDS is its sensitivity, which allows very low defect levels to be investigated even in thin diamond films. The optical absorption coefficient alpha of N-doped films (100 ppm N-2 in the gas phase) shows absorption bands characteristic of Ib diamond. When a Li-containing precursor is used, a deep defect state around 1.5 eV, which has not been reported previously, is observed. Optical transitions due to this defect state are superimposed on the characteristic background absorption present in all CVD diamond films.

引用

页码：1006 / 1011

页数：6

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