Design of an etch-resistant cyclic olefin photoresist

被引：13

作者：

Allen, RD ^{[1
]}

Opitz, J ^{[1
]}

Wallow, TI ^{[1
]}

DiPietro, RA ^{[1
]}

Hofer, DC ^{[1
]}

Jayaraman, S ^{[1
]}

Hullihan, KA ^{[1
]}

Rhodes, LF ^{[1
]}

Goodall, BL ^{[1
]}

Shick, RA ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

cyclic olefin polymers; addition polymerization; 193nm photoresists; etch resistance;

D O I：

10.1117/12.312472

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In the quest for a high performance 193nm photoresist with robust plasma etching resistance equivalent to or better than the DUV resists of today, we have focused on the use of cyclic olefin polymers. In this paper, we will discuss monomer synthesis, polymerization approaches, polymer properties and early lithographic results of 193nm photoresists formulated from cyclic olefin polymeric materials made from a metal-catalyzed addition polymerization process. The goal of this work is to produce a 193nm photoresist with excellent imaging performance and etch resistance exceeding DUV resists, and in fact approaching novolak-based photoresists.

引用

页码：463 / 471

页数：3