Environmental effects in the third moment of voltage fluctuations in a tunnel junction

被引：240

作者：

Reulet, B ^{[1
]}

Senzier, J

Prober, DE

机构：

[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[2] Yale Univ, Dept Phys, New Haven, CT 06520 USA

[3] Univ Paris 11, Phys Solides Lab, UMR 8502, F-91405 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.91.196601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the first measurements of the third moment of the voltage fluctuations in a conductor. This technique can provide new and complementary information on the electronic transport in conducting systems. The measurement was performed on nonsuperconducting tunnel junctions as a function of voltage bias, for various temperatures and bandwidths up to 1 GHz. The data demonstrate the significant effect of the electromagnetic environment of the sample.

引用

页码：1 / 196601

页数：4

共 12 条

[1] Temperature-dependent third cumulant of tunneling noise [J].