Profile Evolution for Conformal Atomic Layer Deposition over Nanotopography

被引:28
作者
Cleveland, Erin R. [1 ,2 ]
Banerjee, Parag [1 ,2 ]
Perez, Israel [1 ,2 ]
Lee, Sang Bok [4 ,5 ]
Rubloff, Gary W. [1 ,3 ]
机构
[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Syst Res Inst, College Pk, MD 20742 USA
[3] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
[4] Univ Maryland, Dept Chem & Biochem, College Pk, MD 20742 USA
[5] Korea Adv Inst Sci & Technol, Grad Sch Nanosci & Technol WCU, Taejon 305701, South Korea
关键词
atomic layer deposition; porous anodic alumina; conformality; nanopetunias; ANODIC POROUS ALUMINA; GATE DIELECTRICS; FABRICATION; PERFORMANCE; OXIDE; MEMBRANES; GROWTH; ARRAYS; FILMS;
D O I
10.1021/nn1009984
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The self-limiting reactions which distinguish atomic layer deposition (ALD) provide ultrathin film deposition with superb conformality over the most challenging topography. This work addresses how the shapes (i.e., surface profiles) of nanostructures are modified by the conformality of ALD. As a nanostructure template, we employ a highly scalloped surface formed during the first anodization of the porous anodic alumina (PAA) process, followed by removal of the alumina to expose a scalloped Al surface. SEM and AFM reveal evolution of surface profiles that change with AID layer thickness, influenced by the way AID conformality decorates the underlying topography. The evolution of surface profiles is modeled using a simple geometric 3D extrusion model, which replicates the measured complex surface topography. Excellent agreement is obtained between experimental data and the results from this model, suggesting that for this AID system conformality is very high even on highly structured, sharp features of the initial template surface. Through modeling and experimentation, the benefits of ALD to manipulate complex surface topographies are recognized and will play an important role in the design and nanofabrication of next generation devices with increasingly high aspect ratios as well as nanoscale features.
引用
收藏
页码:4637 / 4644
页数:8
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