Full potential linearized augmented plane wave calculations of structural and electronic properties of BN, BP, BAs and BSb

被引:178
作者
Zaoui, A [1 ]
Hassan, FE
机构
[1] INFM, I-34014 Trieste, Italy
[2] Dipartimento Fis Teor, I-34014 Trieste, Italy
[3] LPLI, IUT Mesures Phys, F-57078 Metz, France
关键词
D O I
10.1088/0953-8984/13/2/303
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A theoretical study of structural and electronic properties of boron compounds BN, BP, BAs and BSb is presented, using the full potential linearized augmented plane wave method. In this approach, the generalized gradient approximation was used for the exchange-correlation potential. Ground state properties such as lattice parameter, bulk modulus and its pressure derivative are calculated as well as structural transition pressure. The band structure is obtained for both zincblende and rocksalt structures. We also give the valence charge density at equilibrium lattice constant and at transition pressure. We show from the latter quantity the inverse role between cation and anion for BP, BAs and BSb. Results are discussed and compared with experimental and other theoretical data with reasonable agreement.
引用
收藏
页码:253 / 262
页数:10
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