Enhanced carrier injection efficiency from lateral current injection in multiple-quantum-well DFB lasers

被引：9

作者：

Champagne, A ^{[1
]}

Maciejko, R ^{[1
]}

Makino, T ^{[1
]}

机构：

[1] BELL N RES,NAPPAN ISL,ON K1Y 4H7,CANADA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 06期

关键词：

D O I：

10.1109/68.502082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bidimensional simulation shows that the lateral carrier injection in etched active region of multipie-quantum-well DFB lasers represents a large fraction of the injected current, leading to improved carrier homogenization in the wells. This increases the average carrier density substantially and provides a much higher gain for the same injected current, depending on detailed device structure.

引用

收藏

页码：749 / 751

页数：3

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