Directing the architecture of cuprous oxide crystals during electrochemical growth

被引：296

作者：

Siegfried, MJ ^{[1
]}

Choi, KS ^{[1
]}

机构：

[1] Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2005年 / 44卷 / 21期

关键词：

crystal growth; electrochemistry; semiconductors; solid-state structures;

D O I：

10.1002/anie.200463018

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

(Figure Presented) A new level of programmability and freedom in directing the crystal growth of cuprous oxide was demonstrated by controlling the degree of branching and crystal habit in a systematic manner during electrodeposition. Examples of Cu2O crystals in which these features were directed by rationally designing a growth condition and growth history are shown (scale bar = 1 μm). © 2005 Wiley-VCH Verlag GmbH &. Co. KGaA.

引用

页码：3218 / 3223

页数：6

共 30 条

[1] Morphological control of particles [J].