Improvement of current-voltage characteristics in organic light emitting diodes by application of reversed-bias voltage

被引:43
作者
Zou, DC [1 ]
Yahiro, M [1 ]
Tsutsui, T [1 ]
机构
[1] Kyushu Univ, Grad Sch Engn Sci, Dept Appl Sci Elect & Mat, Kasuga, Fukuoka 816, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 11B期
关键词
organic electroluminescence; reverse bias; voltage shift; internal field; external field; enhancement;
D O I
10.1143/JJAP.37.L1406
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of reversed-bias application on current-voltage and luminance-voltage characteristics of standard-type double-layer organic light emitting diodes [OLEDs], ITO/TPD(50 nm)/Alq(3)(50 nm)/Mg:Ag, were investigated. Both the magnitude of reversed-bias and the duration of reversed-bias application were systematically changed. Evident voltage shifts towards the lower voltage side in current-voltage and luminance-voltage characteristics were observed in the diodes which were treated under various reversed-bias condition. The longer the duration of reversed-bias application, the larger the voltage shift was. A maximum voltage shift of 0.7 V was observed in the diode treated under a -10 V bias for 3 h. Little change in luminance-current density relationships was observed for diodes which were treated under various reversed-bias conditions. The results were interpreted in terms of the movement of ionic impurities and orientational rearrangements of permanent dipoles in organic layers.
引用
收藏
页码:L1406 / L1408
页数:3
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