High electron and hole mobility enhancements in thin-body strained Si/Strained SiGe/strained Si heterostructures on insulator

被引：25

作者：

Åberg, I ^{[1
]}

Chléirigh, CN ^{[1
]}

Olubuyide, OO ^{[1
]}

Duan, X ^{[1
]}

Hoyt, JL ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully depleted MOSFETs were fabricated on strained Si/strained SiGe (46% Ge)/strained Si heterostructures on insulator (HOI) for the first time, demonstrating both high electron and hole mobility enhancements while maintaining excellent subthreshold characteristics. The total thickness of the heterostructure on insulator is less than 25 nm. At an inversion charge density of 1.5x10(13) cm(-2), mobility enhancements of 90% and 107% are obtained for electrons and holes respectively. The mobility increases as the cap thickness is reduced to 2 nm. HOI offers superior hole mobility than 40% Strained Silicon Directly on Insulator at all vertical fields, when the cap thickness is below 5 nm.

引用

页码：173 / 176

页数：4

共 10 条

[1]

Åberg I, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P52

[2]

ABERG I, 2004 IEEE INT SOI C

[3] QUANTUM CORRECTION TO THE EQUATION OF STATE OF AN ELECTRON-GAS IN A SEMICONDUCTOR [J].