Detailed observation of small leak current in flash memories with thin tunnel oxides

被引：7

作者：

Manabe, Y ^{[1
]}

Okuyama, K ^{[1
]}

Kubota, K ^{[1
]}

Nozoe, A ^{[1
]}

Karashima, T ^{[1
]}

Ujiie, K ^{[1
]}

Kanno, H ^{[1
]}

Nakashima, M ^{[1
]}

Ajika, N ^{[1
]}

机构：

[1] Hitachi Ltd, Semicond & Integrated Circuits Div, Kodaira, Tokyo 187, Japan

来源：

ICMTS 1998: PROCEEDINGS OF THE 1998 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 1998年

关键词：

D O I：

10.1109/ICMTS.1998.688049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a method for measuring the small current through the oxides on the order of 10(-20) A or less using a floating gate MOSFET and the application results on flash memories with thin tunnel oxides. The method is based on accurate measurement of the threshold voltage of a floating gate MOSFET with no charge in the floating gate. We applied the method to flash memories to investigate the leak current behavior through thin tunnel oxides with very small areas (<0.16 mu m2), and found some anomalous phenomena which cannot be obtained from SILC measurements using large capacitors. We also discuss possible mechanisms to explain the phenomena.

引用

页码：95 / 99

页数：5