>30 dB gain at 1500nm in S-band Erbium-doped silica fiber with distributed ASE suppression

被引：13

作者：

Arbore, MA ^{[1
]}

Zhou, YD ^{[1
]}

Keaton, G ^{[1
]}

Kane, TJ ^{[1
]}

机构：

[1] Lightwave Elect Corp, Mountain View, CA 94043 USA

来源：

OPTICAL DEVICES FOR FIBER COMMUNICATION IV | 2003年 / 4989卷

关键词：

S-band; EDFA; Erbium-doped fiber; fundamental mode cutoff; distributed ASE suppression;

D O I：

10.1117/12.481150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

S-band amplification with >30 dB peak gain at 1500nm, >20 dB gain for wavelengths between 1475nm and 1520nm, and 5 dB noise figure is demonstrated in Erbium-doped Alumino-germanosilicate fiber. Using standard MCVD processing and solution doping, we combined a depressed-cladding fiber design with erbium doping to create a new type of gain fiber. A fundamental mode cutoff near 1530nm provides distributed suppression of C-band amplified spontaneous emission, thereby enabling the high population inversion required for S-band gain. This type of S-band amplifier is compatible with standard fusion splicing techniques and is pumped by standard 980nm pump lasers. In this talk, we will describe gain and noise characteristics for several amplifier architectures, gain saturation characteristics, and gain flattening.

引用

页码：47 / 52

页数：6

&gt;30 dB gain at 1500nm in S-band Erbium-doped silica fiber with distributed ASE suppression

>30 dB gain at 1500nm in S-band Erbium-doped silica fiber with distributed ASE suppression