Photoluminescence properties of SnO2 thin films grown by thermal CVD

被引：210

作者：

Jeong, J

Choi, SP

Chang, CI

Shin, DC

Park, JS

Lee, BT

Park, YJ

Song, HJ ^{[1
]}

机构：

[1] Chonnam Natl Univ, Coll Dent, Dept Dent Mat, Kwangju 500757, South Korea

[2] Chonnam Natl Univ, Coll Dent, Dent Mat Res Inst, Kwangju 500757, South Korea

[3] Chosun Univ, Dept Phys, Kwangju 501759, South Korea

[4] Chosun Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

[5] Chonnam Natl Univ, Thin Film Lab, Dept Mat Sci & Engn Photon & Elect, Kwangju 500757, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 127卷 / 9-10期

关键词：

thin films; chemical synthesis; impurity in semiconductors; optical properties; luminescence;

D O I：

10.1016/S0038-1098(03)00614-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence properties of SnO2 thin films grown by thermal chemical vapor deposition were investigated with different substrate temperatures. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks changed with increasing substrate temperature. It is concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：595 / 597

页数：3

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