Organic field effect transistors based on modified oligo-p-phenylevinylenes

被引：49

作者：

Gorjanc, TC ^{[1
]}

Lévesque, I

D'Iorio, M

机构：

[1] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 06期

关键词：

D O I：

10.1063/1.1639513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an organic field effect transistor device based on a modified oligomer oligo-p-phenylevinylene, 1,4-bis[4-(4-octylphenyl)styryl]-benzene. The effect of growth temperature on the morphology of the organic films and their electrical properties was investigated. Substrates coated with hexamethyldisilazane prior to organic film deposition showed improved electrical characteristics, but a negligible difference with respect to film morphology. A maximum hole mobility of mu=0.12 cm(2)/V s with an on-off current ratio I-on/off>10(6) were measured in films deposited at a substrate temperature of 150degreesC.

引用

页码：930 / 932

页数：3

共 32 条

[1] Phase behavior of α,ω-dihexyl-α-quaterthiophene and ordering on a textured substrate [J].