Dissipation in quasi-one-dimensional superconducting single-crystal Sn nanowires

被引:168
作者
Tian, ML [1 ]
Wang, JG
Kurtz, JS
Liu, Y
Chan, MHW
Mayer, TS
Mallouk, TE
机构
[1] Penn State Univ, Ctr Nanoscale Sci, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[4] Penn State Univ, Dept Chem, University Pk, PA 16802 USA
关键词
D O I
10.1103/PhysRevB.71.104521
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrical transport measurements were made on single-crystal Sn nanowires to understand the intrinsic dissipation mechanisms of a one-dimensional superconductor. While the resistance of wires of diameter larger than 70 nm drops precipitously to zero at T-c near 3.7 K, a residual resistive tail extending down to low temperature is found for wires with diameters of 20 and 40 nm. As a function of temperature, the logarithm of the residual resistance appears as two linear sections, one within a few tenths of a degree below T-c and the other extending down to at least 0.47 K, the minimum temperature of the measurements. The residual resistance is found to be ohmic at all temperatures below T-c of Sn. These findings are suggestive of a thermally activated phase slip process near T-c and quantum fluctuation-induced phase slip process in the low-temperature regime. When the excitation current exceeds a critical value, the voltage-current (V-I) characteristics show a series of discrete steps in approaching the normal state.
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页数:7
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