Combining high resolution and tensorial analysis in Raman stress measurements of silicon

被引：70

作者：

Bonera, E

Fanciulli, M

Batchelder, DN

机构：

[1] INFM, Lab MDM, I-20041 Agrate Brianza, MI, Italy

[2] Univ Leeds, Dept Phys & Astron, Leeds LS2 9JT, W Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 04期

关键词：

D O I：

10.1063/1.1592872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the development of a Raman spectroscopy technique for the measurement of the tensorial nature of stress in silicon on a micrometric scale. After the detailed description of the theoretical bases of the experiment, we measure the stress tensor of a silicon surface close to a scratch. Then, we apply this method to discern which models are suitable for the description of the stress tensor in shallow trench isolations for microelectronics. (C) 2003 American Institute of Physics.

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页码：2729 / 2740

页数：12

相关论文

共 22 条

[1] PIEZO-RAMAN MEASUREMENTS AND ANHARMONIC PARAMETERS IN SILICON AND DIAMOND [J].

ANASTASSAKIS, E ;

CANTARERO, A ;

CARDONA, M .

PHYSICAL REVIEW B, 1990, 41 (11) :7529-7535

[2] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

ANASTASSAKIS, E ;

PINCZUK, A ;

BURSTEIN, E ;

POLLAK, FH ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+

[3] Selection rules of Raman scattering by optical phonons in strained cubic crystals [J].

Anastassakis, E .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) :1582-1591

[4]

[Anonymous], 1996, ULSI Technology

[5] High-pressure phases of group IV and III-V semiconductors [J].

Auckland, GJ .

REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (04) :483-516

[6] Confocal Raman microspectroscopy through a planar interface [J].

Baldwin, KJ ;

Batchelder, DN .

APPLIED SPECTROSCOPY, 2001, 55 (05) :517-524

[7] Stress mapping in silicon: Advantages of using a Raman spectrometer with a single dispersive stage [J].

Bonera, E ;

Fanciulli, M ;

Batchelder, DN .

APPLIED SPECTROSCOPY, 2002, 56 (05) :560-563

[8] Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon [J].

Bonera, E ;

Fanciulli, M ;

Batchelder, DN .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3377-3379

[9]

CARDONA M, 1981, LIGHT SCATTERING SOL, V2

[10] Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment [J].

DeWolf, I ;

Maes, HE ;

Jones, SK .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) :7148-7156