Fabrication of 1.55μm oxidized VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors

被引：2

作者：

Starck, C ^{[1
]}

Plais, A ^{[1
]}

Derouin, E ^{[1
]}

Pinquier, A ^{[1
]}

Gaborit, F ^{[1
]}

Fortin, C ^{[1
]}

Goldstein, L ^{[1
]}

Boucart, J ^{[1
]}

Salet, P ^{[1
]}

Carpentier, D ^{[1
]}

Jacquet, J ^{[1
]}

机构：

[1] Alcatel Alsthom Rech, Corp Res Ctr, F-91460 Marcoussis, France

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the fabrication of 1.55 mu m multi-quantum well Vertical Cavity Surface Emitting Lasers (VCSEL) grown by Gas Source MBE on InP substrate. We use a combination of lattice-matched InP/InGaAsP and GaAs/GaAlAs metamorphic reflectors with high reflectivities. Room temperature operation in pulsed mode is achieved. We also demonstrate that selective wet oxidation of GaAlAs can be applied to metamorphic material.

引用

页码：369 / 372

页数：4