Fabrication of pulsed-laser deposited V2O5 thin films for electrochromic devices

被引:44
作者
Lida, Yusuke [1 ]
Kaneko, Yoshikazu [1 ]
Kanno, Yoshinori [1 ]
机构
[1] Yamanashi Univ, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan
关键词
V2O5; thin film; pulsed-laser deposition; electrochromic devices;
D O I
10.1016/j.jmatprotec.2007.06.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
V2O5 thin films were prepared by using pulsed-laser deposition technique. The influences of substrate temperature and oxygen partial pressure on the growth of V2O5 films were studied. X-ray diffraction, atomic force microscopy, Raman measurements and the optical transmission measurements have been carried out in order to understand the growth mechanisms and the electrochromic parameters of the deposited films. We can understand that the structure of the V2O5 thin film deposited at a low substrate temperature was broken by the insertion and extractions of lithium ions with increasing cycle number of electrochemical react. The surface morphology of the films deposited at T-s = 623 K and PO2 = 13.3 Pa is suitable for an electrochromic devices. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:261 / 267
页数:7
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