Electromechanical strain in conjugated polymer diodes under forward and reverse bias -: art. no. 193507

被引:9
作者
Dennler, G [1 ]
Sariciftci, NS
Schwödiauer, R
Bauer, S
Reiss, H
机构
[1] Johannes Kepler Univ Linz, LIOS Cells, A-4040 Linz, Austria
[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
基金
奥地利科学基金会;
关键词
D O I
10.1063/1.1925779
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic polymeric semiconductor diodes based on polysparaphenylene vinylened exhibit electromechanical strain under reverse and forward bias operation. Under reverse bias, the strain in the organic diode is created by Maxwell forces ("electrostrictive" actuation). Under forward bias, the large electrical current results in Joule heating and thus in a thermally induced electromechanical strain. These electromechanical effects might be used for transducer applications of organic electronic materials. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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