Growth of KNbO3 films by electron-cyclotron-resonance-assisted pulsed laser deposition

被引：16

作者：

Arai, T ^{[1
]}

Ito, S ^{[1
]}

Ishikawa, K ^{[1
]}

Nakamura, K ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Elect & Commun Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 9B期

关键词：

KNbO3; thin film; ECR; PLD; laser ablation; piezoelectrics; ferroelectrics;

D O I：

10.1143/JJAP.42.6019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The (110) cut of KNbO3 piezoelectric crystal is suitable for generation of longitudinal waves, because of its high electromechanical coupling factor k(t). Epitaxial (110) KNbO3 thin films have been grown on (100) MgO and (100) La-doped SrTiO3 substrates using an electron-cyclotron-resonance-assisted pulsed laser deposition (ECR-PLD) technique. In order to ascertain the effect of the ECR activation of oxygen, the X-ray diffraction pattern of a film grown by ECR-PLD is compared with that of a film grown in an oxygen atmosphere without ECR activation. As a consequence, the ECR-PLD technique is found to be notably effective for epitaxial growth of high-quality KNbO3 films. The in-plane orientation of the films is discussed and it is shown that the macroscopic in-plane structure of KNbO3 films should have a fourfold rotational symmetry. Some films grown on La-doped SrTiO3 have slightly longer (110) spacing than that of (110) orthorhombic KNbO3. This suggests that the films might be (001) tetragonal KNbO3.

引用

页码：6019 / 6022

页数：4

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