Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

被引：14

作者：

Stelmakh, N

Mangeney, J

Alexandrou, A

Portnoi, EL

机构：

[1] Univ Paris Sud, Inst Elect Fondamentale, CNRS, URA 022, F-91405 Orsay, France

[2] Ecole Polytech, ENSTA, Lab Opt Appl, CNRS,UMR 7639, F-91761 Palaiseau, France

[3] AF Ioffe Physicotech Inst, St Petersburg 195021, Russia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 25期

关键词：

D O I：

10.1063/1.122873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that bulk GaAs irradiated by heavy Au+ ions shows efficient saturable absorption with subpicosecond recovery time and without any relaxation rate saturation up to excitation densities as high as 1.6 mJ/cm(2). A comparison with other types of ion irradiation shows that heavy-ion-irradiated GaAs is a very promising material for ultrafast optoelectronics and optical processing at high repetition rates. (C) 1998 American Institute of Physics. [S0003-6951(98)00851-1].

引用

页码：3715 / 3717

页数：3

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