Ultraviolet InAlGaN multiple-quantum-well laser diodes

被引：19

作者：

Kneissl, M ^{[1
]}

Treat, DW ^{[1
]}

Teepe, M ^{[1
]}

Miyashita, N ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 200卷 / 01期

关键词：

Band structure - Continuous wave lasers - Current density - Pulsed laser applications - Quantum efficiency - Sapphire - Semiconducting indium compounds - Semiconductor device structures - Semiconductor growth - Semiconductor quantum wells - Ultraviolet devices;

D O I：

10.1002/pssa.200303390

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on ultraviolet InGaN, GaN and InAlGaN multiple-quantum-well (MQW) laser diodes grown on sapphire substrates. Pulsed threshold current densities near 5 kA/cm(2) have been achieved for InGaN MQW laser diodes with emission wavelength between 368 nm and 378 nm and continuous-wave operation of ridge-waveguide devices with threshold currents of 85 mA and output power of more than 3 mW. We also demonstrate room-temperature pulsed operation of InAlGaN MQW laser diodes emitting at a wavelength of 359.9 nm. Light output powers greater than 80 mW under pulsed current-injection conditions (pulse duration 100 ns, repetition frequency 5 kHz) and differential quantum efficiencies of 4.2% have been achieved.

引用

页码：118 / 121

页数：4

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