A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier

被引：79

作者：

Lu, LH ^{[1
]}

Hsieh, HH

Wang, YS

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2005年 / 15卷 / 10期

关键词：

cascode amplifier; CMOS RF; dual-band; impedance matching; low-noise amplifier (LNA); multimode; source degeneration;

D O I：

10.1109/LMWC.2005.856845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a fully integrated 2.4/5.2-GHz dual-band low-noise amplifier (LNA) for WLAN applications. By switching the input transconductance and the output capacitance, the narrow-band gain and impedance matching are achieved at the 2.4-GHz and the 5.2-GHz frequency bands. Using a standard 0.18-mu m CMOS process, a compact dual-band LNA with a chip size comparable to a single-band one is realized in the proposed topology for a minimum hardware cost. The fabricated circuit exhibits gains of 10.1 dB and 10.9 dB, and noise figures of 2.9 dB and 3.7 dB at the two frequency bands, respectively.

引用

页码：685 / 687

页数：3

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