Cesium encapsulation in single-walled carbon nanotubes via plasma ion irradiation: Application to junction formation and ab initio investigation

被引:102
作者
Jeong, GH [1 ]
Farajian, AA
Hatakeyama, R
Hirata, T
Yaguchi, T
Tohji, K
Mizuseki, H
Kawazoe, Y
机构
[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[3] Hitachi Sci Syst, Applicat Technol Dept, Hitachinaka 3128504, Japan
[4] Tohoku Univ, Dept Geosci & Technol, Sendai, Miyagi 9808579, Japan
关键词
D O I
10.1103/PhysRevB.68.075410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using an approach different from the conventional vapor doping methods, Cs positive ions in a magnetized-plasma column are irradiated upon a negatively biased substrate which is covered with dispersed single-walled carbon nanotubes (SWNTs). The Cs ions are evidently observed inside SWNTs by the Z-contrast method in scanning transmission electron microscopy, demonstrating the formation of alkali-metal encapsulating SWNTs. Ab initio band structures and density of states for the light and heavy doping regimes indicate the possibility of using Cs-doped SWNTs as doped junctions, with potential application in nanoelectronics. This is supported by the direct experimental observation of an actual junction.
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页数:6
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