Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

被引：650

作者：

Baek, IG ^{[1
]}

Lee, MS ^{[1
]}

Seo, S ^{[1
]}

Lee, MJ ^{[1
]}

Seo, DH ^{[1
]}

Suh, DS ^{[1
]}

Park, JC ^{[1
]}

Park, SO ^{[1
]}

Kim, HS ^{[1
]}

Yoo, IK ^{[1
]}

Chung, UI ^{[1
]}

Moon, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyeonggi Do, South Korea

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simple binary-TMO (Transition Metal Oxide) Resistive Random Access Memory named as OxRRAM has been fully integrated with 0.18mum CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300degreesC without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2mum(2)

引用

页码：587 / 590

页数：4

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