Crossover from space-charge-limited to recombination-limited transport in polymer light-emitting diodes

被引:73
作者
Martens, HCF
Pasveer, WF
Brom, HB
Huiberts, JN
Blom, PWM
机构
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[3] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 12期
关键词
D O I
10.1103/PhysRevB.63.125328
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By performing admittance spectroscopy as a function of frequency on polymer light-emitting diodes, inductive and capacitive charge-relaxation processes with different characteristic time scales are separated. The inductive contributions arise from the finite transit time of injected carriers, while the capacitive contributions stem from dielectric redistribution of charge density in the device. The crossover from inductive charge relaxation at low bias to capacitive charge relaxation at high bias marks the transition from space-charge-limited to recombination-limited current flow. This unexpected result shows that, while the individual carrier mobilities are strongly enhanced by the applied field, the recombination mobility remains unaffected.
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页数:7
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