Spatial Bandgap Engineering along Single Alloy Nanowires

被引：101

作者：

Gu, Fuxing ^{[1
]}

Yang, Zongyin ^{[1
]}

Yu, Huakang ^{[1
]}

Xu, Jinyou ^{[2
]}

Wang, Pan ^{[1
]}

Tong, Limin ^{[1
]}

Pan, Anlian ^{[2
]}

机构：

[1] Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China

[2] Hunan Univ, Coll Phys & Microelect Sci, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Hunan, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2011年 / 133卷 / 07期

基金：

中国国家自然科学基金;

关键词：

PHOTOLUMINESCENCE;

D O I：

10.1021/ja110092a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bandgap engineering of semiconductor nano-wires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS1-xSex alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.

引用

页码：2037 / 2039

页数：3

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