Growth kinetics of thin films formed by nucleation during layer formation

被引:21
作者
Dubrovskii, VG
Cirlin, GE
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Analyt Instrument Making, St Petersburg 198103, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.2128448
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A kinetic model of thin-film growth on a solid surface is investigated. This model is valid in the case where the layers are formed as a result of two-dimensional nucleation. Under conditions of high supersaturation of a gaseous phase, solutions are obtained for an island-size distribution function at the initial stage of growth, the degree of filling of a substrate by islands at the coalescence stage, the vertical-growth rate of a film, and its surface roughness. These solutions express the structural characteristics of a growing film in terms of physical constants (the interphase energy on the gas-solid interface and the activation barriers of diffusion and desorption) of the system and the growth parameters (the surface temperature and the material-deposition rate). The obtained results make it possible to calculate the growth dynamics for thin films in particular systems. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码:1267 / 1274
页数:8
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