Effect of structure development on self-trapped exciton emission of TiO2 thin films

被引：3

作者：

Sildos, I ^{[1
]}

Suisalu, A ^{[1
]}

Kiisk, V ^{[1
]}

Schuisky, M ^{[1
]}

Mändar, H ^{[1
]}

Uustare, T ^{[1
]}

Aarik, J ^{[1
]}

机构：

[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia

来源：

FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷

关键词：

thin film; anatase; self-trapped exciton; epitaxial growth;

D O I：

10.1117/12.408489

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoluminescence of thin crystalline TiO2 films was studied. The films contained an anatase phase and were grown by the atomic layer deposition method on different single crystal substrates. A polarised re-combination emission of self-trapped excitons was observed in the films at 5 K. A comparison of the obtained spectra with those of the single crystal anatase allowed determining crystallite orientations in the films. Results were consistent with the X-ray diffraction and reflection high-energy electron diffraction data.

引用

页码：427 / 430

页数：4

共 11 条

[1] Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films [J].