Characterization of ZnInxSey thin films as a buffer layer for high efficiency Cu(InGa)Se2 thin-film solar cells

被引：41

作者：

Ohtake, Y ^{[1
]}

Chaisitsak, S ^{[1
]}

Yamada, A ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 152, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 6A期

关键词：

ZnInxSey; II-III2-VI4; compounds; ZnIn2Se4; defect chalcopyrite structure; buffer layer; Cu(lnGa)Sea; chalcopyrite structure; thin-film solar cell;

D O I：

10.1143/JJAP.37.3220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural, optical and electrical properties of ZnInxSey (ZIS) thin films on Cu(InGa)Se-2 (CIGS) thin films and glass substrates were characterized. Polycrystalline ZIS thin films were grown by the coevaporation method using three constituent elements. We confirmed the formation of ZnIn2Se4 from the X-ray diffraction patterns of the ZIS thin films on glass substrates. From the transmittance and reflectance measurements of these films, the bandgap of ZIS is estimated at around 2.0 cV in this study. In addition, the ZIS films on glass substrates show low dark conductivity and high photosensitivity, which are suitable for the buffer layer in CIGS thin-film solar cells. We also fabricated the CIGS thin-film solar cells with a ZnO/ZIS/CIGS structure, and investigated the relationship between the cell performance and the beam intensity ratio of zinc to indium.

引用

页码：3220 / 3225

页数：6

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