Silicon etching by alternating irradiations of negative and positive ions

被引：56

作者：

Shibayama, T ^{[1
]}

Shindo, H ^{[1
]}

Horiike, Y ^{[1
]}

机构：

[1] TOKAI UNIV,DEPT APPL PHYS,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1996年 / 5卷 / 02期

关键词：

D O I：

10.1088/0963-0252/5/2/019

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Si etching by alternating irradiations of negative and positive ions was studied in SF6 plasma. Negative ions were confirmed by a quadrupole mass and energy analyser. The F- ion was a dominant species and showed a maximum in its density at 40 mTorr pressure. The Si etching rate, which was obtained under 400 kHz RF bias, has a maximum at the same pressure as has the F- density, confirming that the negative ion etching was effective. In the etching feature, severe side etching was observed at lower pressures such as 20 mTorr, whereas the etching was fairly directional at higher pressures such as 40 mTorr and the directionality was still kept even for 0.3 mu m width.

引用

页码：254 / 259

页数：6