Charge sensitivity of superconducting single-electron transistor

被引:23
作者
Korotkov, AN [1 ]
机构
[1] MOSCOW MV LOMONOSOV STATE UNIV, INST NUCL PHYS, MOSCOW 119899, RUSSIA
关键词
D O I
10.1063/1.117710
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either SISIS- or NISIN-type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of a similar transistor made of normal metals or semiconductors. The reason is that the superconducting energy gap, in contrast to the Coulomb blockade, is not smeared by the finite temperature. We also discuss the increase of the maximum operation temperature due to superconductivity and the peaklike features on the I-V curve of SISIS structures. (C) 1996 American Institute of Physics.
引用
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页码:2593 / 2595
页数:3
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