The hybrid model for optical phonon confinement in AlN/GaN quantum wells

被引:3
作者
Bennett, CR [1 ]
Ridley, BK [1 ]
Zakhleniuk, NA [1 ]
Babiker, M [1 ]
机构
[1] Univ Essex, Dept Phys, Colchester CO4 3SQ, Essex, England
基金
英国工程与自然科学研究理事会;
关键词
AlN/GaN quantum well; phonon confinement; electron-phonon interaction;
D O I
10.1016/S0921-4526(98)01249-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The confined optical phonons of the AlN/GaN quantum well system are described for an extended version of a continuum theory. The need for the extension is because the reststrahl bands of the two materials overlap and hence a dispersive mode from one material can propagate in the other, weakening the confinement. There is also a problem as to which mechanical boundary conditions should be used in this case. We compare total electron-phonon scattering rates in a quantum well structure for different mechanical boundary conditions and show that, because all of the phonons modes are included, the results are very similar. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:469 / 472
页数:4
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