Bandgap enlargement in anodic oxide films on titanium

被引：13

作者：

Goossens, A

机构：

[1] Lab. for Applied Inorganic Chemistry, Delft University of Technology, 2628 BL Delft

来源：

SURFACE SCIENCE | 1997年 / 371卷 / 2-3期

关键词：

electrochemical methods; metal-electrolyte interfaces; oxidation; quantum effects; semi-empirical models and model calculations; semiconducting films; semiconductor-electrolyte interfaces; solid-liquid interfaces; surface electronic phenomena; surface structure; morphology; roughness; and topography; titanium oxide;

D O I：

10.1016/S0039-6028(96)01087-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin anodic oxide films on titanium in sulphuric acid show bandgap enlargement of at least 0.2 eV provided that the anodization rate is slow and the formation potential limited. The origins of this effect are the occurrence of quantum-size effects and Burstein shifts. Upon aging of films at their formation potentials higher than 1.5 V, a held-assisted sintering process sets in that induces a relaxation of the bandgap to its nominal value.

引用

页码：390 / 398

页数：9

共 63 条

[1] PHOTOCATALYTIC HYDROGENATION OF CH3CCH WITH H2O ON SMALL-PARTICLE TIO2 - SIZE QUANTIZATION EFFECTS AND REACTION INTERMEDIATES [J].