Structural and gas response characterization of nano-size SnO2 films deposited by SILD method

被引:61
作者
Korotcenkov, G
Macsanov, V
Tolstoy, V
Brinzari, V
Schwank, J
Faglia, G
机构
[1] Tech Univ Moldova, Opto & Microelect Lab, Kishinev 168, Moldova
[2] St Petersburg State Univ, Dept Chem, St Petersburg, Russia
[3] Univ Michigan, Dept Chem Engn, Ann Arbor, MI USA
[4] Univ Brescia, Dept Chem & Phys Mat, Brescia, Italy
来源
SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 96卷 / 03期
关键词
SILD; SnO2; gas response; characterization;
D O I
10.1016/j.snb.2003.07.002
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The possibilites of successive ionic layer deposition (SILD) technology for deposition of nano-scalled SnO2 films are discussed in this article. SnO2 films deposited using this technology contain porous agglomerated structures consisting of nano-size crystallites. Even after annealing at T-an = 800 degreesC, the average size crystallites doe snot exceed 6-7 nm. The average size agglomerates depends on film thickness, and range from 20 to 80 nm. These SnO2 films have good gas response especially to ozone and H-2. However, the rate of response to these gases is different. The response to ozone is fast, while the response to exposure to reducing gas, such as H-2, is slow. It is assumed that inter-crystallite gas diffusion in agglomerates limits the rate of response to reducing gases. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:602 / 609
页数:8
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