Er-doped integrated optical devices in LiNbO3

被引:103
作者
Baumann, I
Bosso, S
Brinkmann, R
Corsini, R
Dinand, M
Greiner, A
Schafer, K
Sochtig, J
Sohler, W
Suche, H
Wessel, R
机构
[1] PIRELLI CAVI SPA,I-20126 MILAN,ITALY
[2] PAUL SCHERRER INST,CH-8048 ZURICH,SWITZERLAND
关键词
D O I
10.1109/2944.577395
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The state-of-the-art of Er-doped integrated optical devices in LiNbO3 is reviewed starting with a brief discussion of the technology of Er-indiffusion, This technique yields high-quality waveguides and allows a selective surface doping necessary to develop optical circuits of higher complexity, Doped waveguides have been used as single- and double-pass optical amplifiers for the wavelength range 1530 nm < lambda < 1610 nm, If incorporated in conventional, lossy devices loss-compensating or even amplifying devices can be fabricated, Examples are an electrooptically scanned Ti:Er:LiNbO3 waveguide resonator used as an optical spectrum analyzer and an acoustooptically tunable filter used as a tunable narrowband amplifier, Different types of Ti:Er:LiNbO3 waveguide lasers are presented, Among them are free running Fabry-Perot lasers for six different wavelengths with a conitnuous-wave (CW)-output power up to 63 mW, Tunable lasers could be demonstrated by the intracavity integration of an acoustooptical amplifying wavelength filter yielding a tuning range up to 31 nm, With intracavity electrooptic phase modulation modelocked laser operation has been obtained with pulse repetition frequencies up to 10 GHz; pulses of only a few ps width could be generated, With intracavity amplitude modulation Q-switched laser operation has been achieved leading to the emission of pulses of up to 2.4 W peak power (0.18 mu J) at 2 kHz repetition frequency, Distributed Bragg reflector (DBR) lasers of emission linewidth less than or equal to 8 kHz have been developed using a dry-etched surface grating as one of the mirrors of the laser resonator, Finally, as an example for a monolithic integration of lasers and extracavity devices on the same substrate, a DBR-laser/modulator combination is presented.
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收藏
页码:355 / 366
页数:12
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