Giant tunneling magnetoresistance in nanostructured ZnxFe3-xO4-α-Fe2O3 polycrystalline material

被引：4

作者：

Du, YW ^{[1
]}

Chen, P ^{[1
]}

Zhu, JM ^{[1
]}

Xing, DY ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, State Key Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

ACTA PHYSICA SINICA | 2001年 / 50卷 / 11期

关键词：

tunneling magnetoresistance effect; zinc ferrite; nanostructure;

D O I：

10.7498/aps.50.2275

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Giant tunneling magnetoresistance effect (TMR) as large as 1280% at 4.2K and 158% at 300K was observed in Zn-0.41 Fe2.59O4-alpha -Fe2O3 polycrystalline sample. The Zn0.41Fe2.59O4 grains are separated by insulating alpha -Fe2O3 thin layer boundaries. The pattern of nanostructure has been verified by TEM and HREM and the thickness of alpha -Fe2O3 boundary is about 6-7mn. The huge TMR is attributed to the high spin-polarization of Zn0.41Fe2.59O4 grains and insulating antiferromagnetic alpha -Fe2O3 thin layer. The ZnxFe3O4 ferrite is a new type half-metallic material with a huge TMR at room temperature is interesting to further study in future.

引用

页码：2275 / 2277

页数：3

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