All-solution-processed n-type organic transistors using a spinning metal process

被引:91
作者
Lee, TW
Byun, Y
Koo, BW
Kang, IN
Lyu, YY
Lee, CH
Pu, L
Lee, SY
机构
[1] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea
[2] Catholic Univ Korea, Dept Chem, Puchon 420743, Gyeonggi Do, South Korea
[3] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
[4] Sungkyunkwan Univ, Dept Adv Mat, Suwon 440746, Kyunggi Do, South Korea
关键词
D O I
10.1002/adma.200401672
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The synthesis of n-type organic thin film transistors (OTFT) was carried out by an all-solution-deposition process including source and drain metals as well as gate insulators and organic semiconductors. The organic semiconductors used are the soluble derivatives of C60. The OTFTs are well suited for a wide range of existing and future flexible circuits and display applications that require a simplified production process, low-weight and low-cost products. The solution processed organic semiconductor film in the OTFT were achieved using thermally curable organic gate insulator.
引用
收藏
页码:2180 / 2184
页数:5
相关论文
共 19 条
[1]   Photosensitive pentacene precursor: Synthesis, photothermal patterning, and application in thin-film transistors [J].
Afzali, A ;
Dimitrakopoulos, CD ;
Graham, TO .
ADVANCED MATERIALS, 2003, 15 (24) :2066-+
[2]   Ambipolar organic field-effect transistors based on a solution-processed methanofullerene [J].
Anthopoulos, TD ;
Tanase, C ;
Setayesh, S ;
Meijer, EJ ;
Hummelen, JC ;
Blom, PWM ;
de Leeuw, DM .
ADVANCED MATERIALS, 2004, 16 (23-24) :2174-+
[3]   High electron mobility in ladder polymer field-effect transistors [J].
Babel, A ;
Jenekhe, SA .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (45) :13656-13657
[4]  
Babel A, 2002, ADV MATER, V14, P371, DOI 10.1002/1521-4095(20020304)14:5<371::AID-ADMA371>3.0.CO
[5]  
2-5
[6]   Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents [J].
Chang, JF ;
Sun, BQ ;
Breiby, DW ;
Nielsen, MM ;
Sölling, TI ;
Giles, M ;
McCulloch, I ;
Sirringhaus, H .
CHEMISTRY OF MATERIALS, 2004, 16 (23) :4772-4776
[7]  
Horowitz G, 1998, ADV MATER, V10, P365, DOI 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO
[8]  
2-U
[9]   PREPARATION AND CHARACTERIZATION OF FULLEROID AND METHANOFULLERENE DERIVATIVES [J].
HUMMELEN, JC ;
KNIGHT, BW ;
LEPEQ, F ;
WUDL, F ;
YAO, J ;
WILKINS, CL .
JOURNAL OF ORGANIC CHEMISTRY, 1995, 60 (03) :532-538
[10]   A soluble and air-stable organic semiconductor with high electron mobility [J].
Katz, HE ;
Lovinger, AJ ;
Johnson, J ;
Kloc, C ;
Siegrist, T ;
Li, W ;
Lin, YY ;
Dodabalapur, A .
NATURE, 2000, 404 (6777) :478-481