Optical and electronic properties of metal doped thermoelectric Zn4Sb3

被引：30

作者：

Litvinchuk, A. P. ^{[1
,2
]}

Nylen, J. ^{[3
]}

Lorenz, B. ^{[1
,2
]}

Guloy, A. M. ^{[1
,2
]}

Haeussermann, U. ^{[4
]}

机构：

[1] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

[2] Univ Houston, Dept Phys, Houston, TX 77204 USA

[3] Stockholm Univ, Dept Inorgan Chem, SE-10691 Stockholm, Sweden

[4] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2946450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical and electronic properties of metal (Pb, Bi, Sn, and In) doped Zn4Sb3 are reported in the temperature range 80-300 K, which covers the beta, alpha, and alpha(') structural phases of this thermoelectric material. Metal doping alters the subtle balance between Zn disorder and Zn deficiency present in beta-Zn4Sb3 and changes its low temperature structural behavior. Analysis of infrared reflection data shows that the formation of ordered alpha'-Zn4Sb3 is accompanied by a substantial increase in the free charge-carrier concentration. In contrast, for samples where doping suppresses the occurrence of the low temperature alpha'-phase, the free charge-carrier concentration is only weakly temperature dependent. Different degrees of structural disorder in doped beta-Zn4Sb3 and the ordering processes at low temperatures leading to alpha- and alpha'-Zn4Sb3 are also recognized in the charge-carrier dynamics. (c) 2008 American Institute of Physics.

引用

页数：6

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