Neutron radiation hardness of monolithic active pixel sensors for charged particle tracking

被引:31
作者
Deveaux, M
Claus, G
Deptuch, G
Dulinski, W
Gornushkin, Y
Winter, M
机构
[1] IN2P3 ULP, IReS, F-67037 Strasbourg, France
[2] Univ Kaiserslautern, D-67663 Kaiserslautern, Germany
[3] IN2P3 ULP, LEPSI, F-67037 Strasbourg, France
[4] UMM, PL-30059 Krakow, Poland
关键词
monolithic active pixel sensors; radiation hardness; solid state detectors; pixel detectors; neutrons irradiation;
D O I
10.1016/S0168-9002(03)01878-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Monolithic Active Pixel Sensors (MAPS) for charged particle tracking consist of a novel detection technique, where the detecting element is inseparable from the readout electronics, both of them being integrated on the same substrate. As radiation hardness is mandatory for most applications, the resistance of a MAPS-detector design against irradiation is currently subject to intensive studies. Parameters such as charge-to-voltage conversion gain, pixel leakage current, noise and charge collection efficiency are investigated as a function of integrated dose. First- and second-generation prototypes, MIMOSA1 and MIMOSA2, were irradiated with up to 10(13) n(eq)/cm(2) for this purpose. Preliminary results are presented. The charge-to-voltage conversion gain and noise were found to be almost stable and the leakage current was observed to raise moderately. On the other hand, the pixel charge collected came out to be substantially affected by the highest fluences considered. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:71 / 76
页数:6
相关论文
共 1 条
[1]   Design and testing of Monolithic Active Pixel Sensors for charged particle tracking [J].
Deptuch, G ;
Berst, JD ;
Claus, G ;
Colledani, C ;
Dulinski, W ;
Gornushkin, Y ;
Husson, D ;
Riester, JL ;
Winter, M .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (02) :601-610