Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces

Carbon patterns were deposited on Si(100) by electron beam-induced contamination decomposition. The feasibility of using such patterns as a mask for a subsequent electrochemical deposition of Au is studied. We demonstrate that under optimized electrochemical conditions electrodeposition of Au can be blocked selectively by single line carbon deposits in the order of only 1 nm thickness. The lateral resolution of this negative patterning process is in the sub 100 nm range. The principle opens perspectives for high definition patterning of semiconductor surfaces by selective electrodeposition. (C) 2001 American Institute of Physics.