Step coverage and continuity of an I-PVD Ta(n) barrier layer: Limitations

被引：10

作者：

Tokei, Z ^{[1
]}

McInerney, D ^{[1
]}

Baklanov, M ^{[1
]}

Beyer, GP ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The step coverage and continuity of a Ta(N) I-PVD barrier layer is investigated combining an I-IF-dip technique, X-SEM and TFM. The HF dip technique appears to be the most sensitive in revealing imperfections on the sidewall of recesses. The aspect ratio (AR) dependence of the I-PVD deposited barrier is apparent. The studies were complemented with with Single Wavelength Ellipsometry. It is pointed out that the LMP deposition technique can successfully be applied for AR <4. Above an aspect ratio of four the deposited barrier can become discontinuous on recess sidewalls. It is also illustrated how process parameters can influence step coverage.

引用

页码：213 / 215

页数：3