共 55 条
Kirkendall approach to the fabrication of ultra-thin ZnO nanotubes with high resistive sensitivity to humidity
被引:26
作者:

Qiu, Yongfu
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Yang, Shihe
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China
机构:
[1] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China
关键词:
D O I:
10.1088/0957-4484/19/26/265606
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Ultra-thin ZnO nanotubes with an inner diameter of similar to 3 nm and an outer diameter of similar to 13 nm have been prepared via Kirkendall effect for the first time. The synthetic process was started from ultra-thin Zn nanowires, which were subjected to direct oxidation to form Zn-ZnO core-shell tubular nanostructures with continuous expansion of Kirkendall voids, and finally evolve into the ZnO nanotubes. The ultra-thin ZnO nanotubes have shown unusually high sensitivity to humidity in a resistive sensor mode, which can be attributed to not only the high specific surface areas, but more importantly, the overlapped electric double layers in the nanoscale channels with a significantly enhanced proton conductivity. This new type of proton conductive nanomaterials has important implications in the development of membranes in modern fuel cells among others.
引用
收藏
页数:7
相关论文
共 55 条
[1]
Investigation into a novel humidity sensor operating at room temperature
[J].
Arshak, KI
;
Twomey, K
.
MICROELECTRONICS JOURNAL,
2002, 33 (03)
:213-220

Arshak, KI
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Limerick, ECE Dept, Microelect & Semicond Res Grp, Limerick, Ireland Univ Limerick, ECE Dept, Microelect & Semicond Res Grp, Limerick, Ireland

论文数: 引用数:
h-index:
机构:
[2]
Zinc oxide single-crystal microtubes
[J].
Cheng, JP
;
Guo, RY
;
Wang, QM
.
APPLIED PHYSICS LETTERS,
2004, 85 (22)
:5140-5142

Cheng, JP
论文数: 0 引用数: 0
h-index: 0
机构:
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

Guo, RY
论文数: 0 引用数: 0
h-index: 0
机构: Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

Wang, QM
论文数: 0 引用数: 0
h-index: 0
机构: Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[3]
PEG-assisted synthesis of ZnO nanotubes
[J].
Duan, J
;
Huang, XT
;
Wang, E
.
MATERIALS LETTERS,
2006, 60 (15)
:1918-1921

Duan, J
论文数: 0 引用数: 0
h-index: 0
机构:
Cent China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China Cent China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China

Huang, XT
论文数: 0 引用数: 0
h-index: 0
机构:
Cent China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China Cent China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China

Wang, E
论文数: 0 引用数: 0
h-index: 0
机构:
Cent China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China Cent China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China
[4]
First-principles study of migration mechanisms and diffusion of oxygen in zinc oxide
[J].
Erhart, P
;
Albe, K
.
PHYSICAL REVIEW B,
2006, 73 (11)

Erhart, P
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany

Albe, K
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany
[5]
Diffusion of zinc vacancies and interstitials in zinc oxide
[J].
Erhart, Paul
;
Albe, Karsten
.
APPLIED PHYSICS LETTERS,
2006, 88 (20)

Erhart, Paul
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany

Albe, Karsten
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany
[6]
Surface reaction of ZnO nanowires with electron-beam generated alumina vapor
[J].
Fan, Hong Jin
;
Lotnyk, Andriy
;
Scholz, Roland
;
Yang, Yang
;
Kim, Dong Sik
;
Pippel, Eckhard
;
Senz, Stephan
;
Hesse, Dietrich
;
Zacharias, Margit
.
JOURNAL OF PHYSICAL CHEMISTRY C,
2008, 112 (17)
:6770-6774

Fan, Hong Jin
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Lotnyk, Andriy
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Scholz, Roland
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Yang, Yang
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Kim, Dong Sik
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Pippel, Eckhard
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Senz, Stephan
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Hesse, Dietrich
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Zacharias, Margit
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
Univ Freiburg, Fac Sci Appl IMTEK, D-79110 Freiburg, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[7]
Monocrystalline spinel nanotube fabrication based on the Kirkendall effect
[J].
Fan, Hong Jin
;
Knez, Mato
;
Scholz, Roland
;
Nielsch, Kornelius
;
Pippel, Eckhard
;
Hesse, Dietrich
;
Zacharias, Margit
;
Goesele, Ulrich
.
NATURE MATERIALS,
2006, 5 (08)
:627-631

Fan, Hong Jin
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Knez, Mato
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Scholz, Roland
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Nielsch, Kornelius
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Pippel, Eckhard
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Hesse, Dietrich
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Zacharias, Margit
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Goesele, Ulrich
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[8]
Magnetic-dipolar-interaction-induced self-assembly affords wires of hollow nanocrystals of cobalt selenide
[J].
Gao, JH
;
Zhang, B
;
Zhang, XX
;
Xu, B
.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,
2006, 45 (08)
:1220-1223

Gao, JH
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Hong Kong, Hong Kong, Peoples R China

Zhang, B
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Hong Kong, Hong Kong, Peoples R China

Zhang, XX
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Hong Kong, Hong Kong, Peoples R China

Xu, B
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Hong Kong, Hong Kong, Peoples R China
[9]
Metal/semiconductor core/shell nanodisks and nanotubes
[J].
Gao, PX
;
Lao, CS
;
Ding, Y
;
Wang, ZL
.
ADVANCED FUNCTIONAL MATERIALS,
2006, 16 (01)
:53-62

Gao, PX
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Lao, CS
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Ding, Y
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Wang, ZL
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[10]
Conversion of zinc oxide nanobelts into superlattice-structured nanohelices
[J].
Gao, PX
;
Ding, Y
;
Mai, WJ
;
Hughes, WL
;
Lao, CS
;
Wang, ZL
.
SCIENCE,
2005, 309 (5741)
:1700-1704

Gao, PX
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Ding, Y
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Mai, WJ
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Hughes, WL
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Lao, CS
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Wang, ZL
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA