A detailed study of soft- and pre-soft-breakdowns in small geometry MOS structures

被引：54

作者：

Sakura, T ^{[1
]}

Utsunomiya, H ^{[1
]}

Kamakura, Y ^{[1
]}

Taniguchi, K ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect & Informat Syst, Suita, Osaka 5650871, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new soft breakdown (SBD) model in weakly stressed thin gate oxides is proposed. Anomalous leakage current prior to soft breakdown is observed under weak current stress, which strongly indicates the cause of erratic retention error in flash memories. Further current stress induces two types of soft breakdown originating from the same precursor, i. e. multi-step tunneling. One of the SBD features current fluctuation accompanying non-switching 1/f noise and the other random telegraph noise. The difference between the two SBD modes reflect the consequence of different amout of Joule heat damage.

引用

页码：183 / 186

页数：4

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