Formation of InAs quantum dots on a silicon (100) surface

At moderate arsenic fluxes and substrate temperatures (470 degrees C) InAs grows on Si (100) surface in the Stranski-Krastanow growth-mode with the formation of mesoscopic dislocated clusters on top of a two-dimensional periodically corrugated InAs wetting layer. In contrast, at lower temperatures (250 degrees C) a dense array of self-organized nanoscale InAs quantum dots of uniform size and shape is formed. These quantum dots, when grown on a Si buffer layer and covered with a Si cap, give a luminescence line at about 1.3 mu m.