Characterization of the Cu barrier metal interface for copper interconnects

被引：15

作者：

Nogami, T ^{[1
]}

Romero, J ^{[1
]}

Dubin, V ^{[1
]}

Brown, D ^{[1
]}

Adem, E ^{[1
]}

机构：

[1] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA

来源：

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 1998年

关键词：

D O I：

10.1109/IITC.1998.704929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interface of Cu/barrier metal must be controlled to suppress interfacial electromigration of copper. Wetting and agglomeration of thin copper on several kinds of TiN films were analyzed by using AFM. Wetting/agglomeration differed among copper on different TiN. Also, film texture of thicker copper films formed on these TiN films was analyzed by XRD. As wetting at the interface is better, the copper film has higher(lll) texture, indicating that a better Cu/barrier interface and a better film texture occur simultaneously on a copper interconnect.

引用

页码：298 / 300

页数：3