Improved current spreading in 370 nm AlGaN microring light emitting diodes

被引：9

作者：

Choi, HW ^{[1
]}

Dawson, MD ^{[1
]}

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 ONW, Lanark, Scotland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 05期

关键词：

D O I：

10.1063/1.1861130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 10 条

[1] Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate [J].

Chitnis, A ;

Adivarahan, V ;

Shatalov, M ;

Zhang, JP ;

Gaevski, M ;

Wu, SA ;

Pachipulusu, R ;

Sun, J ;

Simin, K ;

Simin, G ;

Yang, JW ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (3B) :L320-L322

[2] High extraction efficiency InGaN micro-ring light-emitting diodes [J].

Choi, HW ;

Dawson, MD ;

Edwards, PR ;

Martin, RW .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4483-4485

[3] Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes [J].

Choi, HW ;

Jeon, CW ;

Dawson, MD ;

Edwards, PR ;

Martin, RW ;

Tripathy, S .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :5978-5982

[4] Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J].

Guo, X ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2001, 78 (21) :3337-3339

[5] High output power 365 nm ultraviolet light emitting diode of GaN-free structure [J].

Morita, D ;

Sano, M ;

Yamamoto, M ;

Murayama, T ;

Nagahama, S ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (12B) :L1434-L1436

[6] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes [J].

Mukai, T ;

Yamada, M ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7A) :3976-3981

[7] Application of light-emitting diodes for aerosol fluorescence detection [J].

Pan, YL ;

Boutou, V ;

Chang, RK ;

Ozden, I ;

Davitt, K ;

Nurmikko, AV .

OPTICS LETTERS, 2003, 28 (18) :1707-1709

[8] Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices [J].

Waldron, EL ;

Li, YL ;

Schubert, EF ;

Graff, JW ;

Sheu, JK .

APPLIED PHYSICS LETTERS, 2003, 83 (24) :4975-4977

[9] Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices [J].

Waldron, EL ;

Graff, JW ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2737-2739

[10] Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes [J].

Wang, T ;

Liu, YH ;

Lee, YB ;

Izumi, Y ;

Ao, JP ;

Bai, J ;

Li, HD ;

Sakai, S .

JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) :177-182

← 1 →