Understanding the Origin of the Low Performance of Chemically Grown Silicon Nanowires for Solar Energy Conversion

被引：74

作者：

Yuan, Guangbi ^{[1
]}

Aruda, Kenneth ^{[1
]}

Zhou, Sa ^{[1
]}

Levine, Andrew ^{[1
]}

Xie, Jin ^{[1
]}

Wang, Dunwei ^{[1
]}

机构：

[1] Boston Coll, Dept Chem, Merkert Chem Ctr, Chestnut Hill, MA 02467 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2011年 / 50卷 / 10期

关键词：

chemical vapor deposition; electrochemical impedance spectroscopy; energy conversion; silicon; solar cells; ARRAYS; SINGLE; ABSORPTION;

D O I：

10.1002/anie.201006617

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Wired: Electrochemical impedance spectroscopy (ESI) reveals that high energy-conversion efficiencies are attainable on vertically aligned Si nanowires obtained by electroless etching (see picture). The key reason for the low performance of chemically grown Si nanowires lies in the mid-gap traps as a result of growth chemistry. (Graph Presented). © 2011 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：2334 / 2338

页数：5

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