High resolution X-ray photoelectron spectroscopy of beta gallium oxide films deposited by ultra high vacuum radio frequency magnetron sputtering

被引:10
作者
Takeuchi, Toshio [1 ]
Ishikawa, Hiroki [2 ]
Takeuchi, Norikazu [2 ]
Horikoshi, Yoshiji [1 ,2 ]
机构
[1] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan
[2] Waseda Univ, Dept Elect Engn & Biosci, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
关键词
high resolution XPS; gallium oxide; oxygen deficiency; valence band structure; UHV RF magnetron sputtering;
D O I
10.1016/j.tsf.2007.06.075
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The gallium oxide thin films with amorphous, crystalline, and nanostructure morphologies were deposited by a radio frequency magnetron sputtering system in ultra high vacuum conditions. High resolution X-ray photoelectron spectroscopy spectra of films were analyzed relating on the preparation conditions. On the amorphous films, the density of states at valence band region is dependent on the sputtering gas compositions. Beta gallium oxide (100) films are epitaxially deposited on magnesium oxide (100) crystalline substrate. The high resolution X-ray photoelectron spectra suggest the presence of the density of states valence band region with oxygen deficiency out of the stoichiometry on the epitaxial crystalline beta gallium oxide films. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:4593 / 4597
页数:5
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